生命周期: | Transferred | 零件包装代码: | TO-220ML |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.28 | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 9 A | 最大漏极电流 (ID): | 9 A |
最大漏源导通电阻: | 0.35 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 25 W |
最大功率耗散 (Abs): | 25 W | 最大脉冲漏极电流 (IDM): | 36 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2162 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) | |
2SK2162(2-7B1B) | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Pur | |
2SK2162(2-7J1B) | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General Purpose Po | |
2SK2162(SM) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,180V V(BR)DSS,1A I(D),TO-252 | |
2SK2162_06 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) | |
2SK2162TE16R | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 180 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2163 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-220VAR | |
2SK2164 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-263 | |
2SK2165-01 | FUJI |
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N-channel MOS-FET | |
2SK2166-01 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-218VAR |