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2SK216-E PDF预览

2SK216-E

更新时间: 2024-02-09 07:09:41
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
6页 65K
描述
Silicon N Channel MOS FET

2SK216-E 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92配置:Single
最大漏极电流 (Abs) (ID):0.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

2SK216-E 数据手册

 浏览型号2SK216-E的Datasheet PDF文件第2页浏览型号2SK216-E的Datasheet PDF文件第3页浏览型号2SK216-E的Datasheet PDF文件第4页浏览型号2SK216-E的Datasheet PDF文件第5页浏览型号2SK216-E的Datasheet PDF文件第6页 
2SK213, 2SK214, 2SK215, 2SK216  
Silicon N Channel MOS FET  
REJ03G0903-0200  
(Previous: ADE-208-1241)  
Rev.2.00  
Sep 07, 2005  
Application  
High frequency and low frequency power amplifier, high speed switching.  
Complementary pair with 2SJ76, J77, J78, J79  
Features  
Suitable for direct mounting  
High forward transfer admittance  
Excellent frequency response  
Enhancement-mode  
Outline  
RENESAS Package code: PRSS0004AC-A  
(Package name: TO-220AB)  
D
1. Gate  
G
2. Source  
(Flange)  
3. Drain  
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 5  

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