2SK2173
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2SK2173
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON−resistance
z High forward transfer admittance
: R
= 13 mΩ (typ.)
DS (ON)
: |Y | = 40 S (typ.)
fs
z Low leakage current
z Enhancement mode
: I
= 100 μA (max) (V
= 60 V)
DSS
DS
: V = 0.8 to 2.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
60
60
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
±20
50
V
GSS
1. GATE
DC (Note 1)
I
A
D
2. DRAIN (HEAT SINK)
3. SOURCE
Drain current
Pulse (Note 1)
I
200
125
A
DP
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
P
W
D
AS
AR
JEDEC
JEITA
―
E
683
mJ
(Note 2)
SC-65
Avalanche current
I
50
12.5
A
TOSHIBA
2-16C1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 4.6 g (typ.)
T
ch
150
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
1.0
50
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V = 25 V, T = 25°C (initial), L = 371 μH, R = 25 Ω, I = 50 A
DD
ch
G
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-12-09