是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.9 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 2.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
湿度敏感等级: | 2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 20 W | 最大功率耗散 (Abs): | 20 W |
最大脉冲漏极电流 (IDM): | 9 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 90 ns | 最大开启时间(吨): | 45 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK217C | HITACHI |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK217-C | HITACHI |
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暂无描述 | |
2SK217-C | RENESAS |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET | |
2SK217D | HITACHI |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK217-D | RENESAS |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET | |
2SK217-D | HITACHI |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET | |
2SK217E | HITACHI |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK217E | RENESAS |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, MPAK-3 | |
2SK217-E | HITACHI |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET | |
2SK217-E | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |