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2SK2179 PDF预览

2SK2179

更新时间: 2024-09-24 22:52:51
品牌 Logo 应用领域
新电元 - SHINDENGEN 晶体晶体管开关脉冲
页数 文件大小 规格书
6页 242K
描述
VX-2 Series Power MOSFET(500V 3A)

2SK2179 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknown风险等级:5.9
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:2.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
湿度敏感等级:2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
功耗环境最大值:20 W最大功率耗散 (Abs):20 W
最大脉冲漏极电流 (IDM):9 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):90 ns最大开启时间(吨):45 ns
Base Number Matches:1

2SK2179 数据手册

 浏览型号2SK2179的Datasheet PDF文件第2页浏览型号2SK2179的Datasheet PDF文件第3页浏览型号2SK2179的Datasheet PDF文件第4页浏览型号2SK2179的Datasheet PDF文件第5页浏览型号2SK2179的Datasheet PDF文件第6页 
SHINDENGEN  
VX-2 Series Power MOSFET  
N-Channel Enhancement type  
OUTLINE DIMENSIONS  
2SK2179  
(F3E50VX2)  
Case : E-pack  
(Unit : mm)  
500V 3A  
FEATURES  
Input capacitance (Ciss) is small.  
Especially, input capacitance  
at 0 biass is small.  
The static Rds(on) is small.  
The switching time is fast.  
APPLICATION  
Switching power supply of AC 100V input  
High voltage power supply  
Inverter  
RATINGS  
Absolute Maximum Ratings Tc = 25℃)  
Item  
Symbol  
Conditions  
Ratings Unit  
-55~150 ℃  
150  
stg  
StorageTemperature  
T
T
ch  
ChannelTemperature  
DSS  
GSS  
D
Drain-SourceVoltage  
V
V
500  
±30  
3
V
Gate-SourceVoltage  
ContinuousDrainCurrentDC)  
ContinuousDrainCurrentPeak)  
ContinuousSourceCurrentDC)  
TotalPowerDissipation  
I
DP  
I
S
I
9
3
20  
3
A
T
P
W
A
AS  
I
ch  
T =25℃  
SinglePulseAvalancheCurrent  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

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