Datasheet > 2SK2174S

2SK2174S

更新时间： 2024-09-22 23:20:39

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2SK2174S 数据手册

2SK2174 L , 2SK2174 S

Silicon N Channel MOS FET

Application

HDPAK

High speed power switching

Features

• Low on–resistance

2, 4

• High speed switching

• No secondary breakdown

• Suitable for Switching regulator, DC – DC

converter

1. Gate

2. Drain

3. Source

4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

500

DSS

———————————————————————————————————————————

Gate to source voltage

±30

GSS

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Drain peak current

D(pulse)

———————————————————————————————————————————

Body–drain diode reverse drain current

———————————————————————————————————————————

Channel dissipation

Pch**

120

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at Tc = 25 °C

12 3

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