Datasheet > 2SK2162_06

2SK2162_06

更新时间： 2024-11-12 04:26:27

品牌	Logo	应用领域
东芝 - TOSHIBA		功率放大器
页数	文件大小	规格书
3页	121K
描述
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

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数据手册

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2SK2162_06 数据手册

2SK2162

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

2SK2162

Audio-Frequency Power Amplifier Applications

Unit: mm

•

High breakdown voltage: V

= 180 V

DSS

High forward transfer admittance: |Y | = 0.7 S (typ.)

Complementary to 2SJ338

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

180

±20

DSS

Gate-source voltage

Drain current

GSS

(Note 1)

Power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

°C

stg

150

−55~150

Note 1: Ensure that the channel temperature does not exceed 150°C.

JEDEC

JEITA

―

SC-64

2-7B1B

Note 2: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

TOSHIBA

Weight: 0.36 g (typ.)

temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability

data (i.e. reliability test report and estimated failure rate, etc).

JEDEC

JEITA

―

TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)

2006-11-21

12 3

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