生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 40 A | 最大漏源导通电阻: | 0.02 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 40 W | 最大脉冲漏极电流 (IDM): | 160 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2164 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-263 | |
2SK2165-01 | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2166-01 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-218VAR | |
2SK2166-01R | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2167 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SK2168 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SK2169 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SK2169AZ | ONSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 250V, 1-Element, N-Channel, Silicon, Meta | |
2SK216-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK216K | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500MA I(D) | TO-220AB |