Datasheet > 2SK2157C-T1-AZ

2SK2157C-T1-AZ

更新时间： 2024-01-15 05:59:51

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
8页	221K
描述
N-CHANNEL MOSFET FOR SWITCHING

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技术参数
数据手册

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2SK2157C-T1-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	MP-2	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.83
Base Number Matches：	1

2SK2157C-T1-AZ 数据手册

Preliminary Data Sheet

2SK2157C

N-CHANNEL MOSFET FOR SWITCHING

R07DS1264EJ0200

Rev.2.00

Jun 18, 2015

Description

The 2SK2157C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven

directly by a 2.5 V power source.

Features

 Directly driven by a 2.5 V power source.

 Low on-state resistance

R^DS(on)1= 63 m  MAX. (VGS = 4.5 V, ID = 2.0 A)

R^DS(on)2= 65 m MAX. (VGS = 4.0 V, ID = 2.0 A)

R^DS(on)3= 91 m MAX. (VGS = 2.5 V, ID = 2.0 A)

Ordering Information

Part Number

Lead Plating

Packing

Package

2SK2157C-T1-AZ/AY

-AZ : Sn-Bi , -AY : Pure Sn

1000p/Reel

SC-84 (MP-2)

Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.

Marking XR1

Absolute Maximum Ratings (T^A= 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC)

VDSS

VGSS

ID(DC)

ID(pulse)

12

3.5

Drain Current (pulse) ^Note1

14

Total Power Dissipation ^Note2

Channel Temperature

2.0

C

Tch

150

Storage Temperature

Tstg

55 to 150

Note1 PW  10 s, Duty Cycle  1%

Note2 16 cm²X 0.7mm, ceramic substrate used

R07DS1264EJ0200 Rev.2.00

Jun 18, 2015

Page 1 of 6

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2SK2158A-T2B	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346
2SK2158A-T2B-AT	RENESAS	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal
2SK2159	TYSEMI	获取价格	Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.7 MAX.VGS = 1.5 V, ID = 0.1 A
2SK2159	KEXIN	获取价格	MOS Field Effect Transistor