生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.17 |
其他特性: | GATE PROTECTED, HIGH INPUT IMPEDANCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (ID): | 0.1 A |
最大漏源导通电阻: | 20 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2158-A | RENESAS |
获取价格 |
100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
![]() |
2SK2158A-T1B | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346 |
![]() |
2SK2158A-T1B-AT | RENESAS |
获取价格 |
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal |
![]() |
2SK2158A-T2B | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346 |
![]() |
2SK2158A-T2B-AT | RENESAS |
获取价格 |
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal |
![]() |
2SK2159 | TYSEMI |
获取价格 |
Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.7 MAX.VGS = 1.5 V, ID = 0.1 A |
![]() |
2SK2159 | KEXIN |
获取价格 |
MOS Field Effect Transistor |
![]() |
2SK2159 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
![]() |
2SK2159-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal- |
![]() |
2SK215-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET |
![]() |