是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | TO-220AB, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.36 |
外壳连接: | SOURCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最大漏极电流 (ID): | 0.5 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK214 | RENESAS |
类似代替 |
Silicon N Channel MOS FET | |
2SK213-E | RENESAS |
类似代替 |
Silicon N Channel MOS FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2160 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SK2161 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SK2162 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) | |
2SK2162(2-7B1B) | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Pur | |
2SK2162(2-7J1B) | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General Purpose Po | |
2SK2162(SM) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,180V V(BR)DSS,1A I(D),TO-252 | |
2SK2162_06 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) | |
2SK2162TE16R | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 180 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2163 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-220VAR | |
2SK2164 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-263 |