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2SK216 PDF预览

2SK216

更新时间: 2024-11-30 06:24:51
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管开关局域网
页数 文件大小 规格书
6页 65K
描述
Silicon N Channel MOS FET

2SK216 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:TO-220AB, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.36
外壳连接:SOURCE配置:SINGLE WITH BUILT-IN DIODE
最大漏极电流 (ID):0.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK216 数据手册

 浏览型号2SK216的Datasheet PDF文件第2页浏览型号2SK216的Datasheet PDF文件第3页浏览型号2SK216的Datasheet PDF文件第4页浏览型号2SK216的Datasheet PDF文件第5页浏览型号2SK216的Datasheet PDF文件第6页 
2SK213, 2SK214, 2SK215, 2SK216  
Silicon N Channel MOS FET  
REJ03G0903-0200  
(Previous: ADE-208-1241)  
Rev.2.00  
Sep 07, 2005  
Application  
High frequency and low frequency power amplifier, high speed switching.  
Complementary pair with 2SJ76, J77, J78, J79  
Features  
Suitable for direct mounting  
High forward transfer admittance  
Excellent frequency response  
Enhancement-mode  
Outline  
RENESAS Package code: PRSS0004AC-A  
(Package name: TO-220AB)  
D
1. Gate  
G
2. Source  
(Flange)  
3. Drain  
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 5  

2SK216 替代型号

型号 品牌 替代类型 描述 数据表
2SK214 RENESAS

类似代替

Silicon N Channel MOS FET
2SK213-E RENESAS

类似代替

Silicon N Channel MOS FET

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