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2SK2158A-T2B-AT PDF预览

2SK2158A-T2B-AT

更新时间: 2024-01-07 14:41:30
品牌 Logo 应用领域
瑞萨 - RENESAS 开关光电二极管晶体管
页数 文件大小 规格书
5页 126K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MINI MOLD, SC-59, 3 PIN

2SK2158A-T2B-AT 数据手册

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DATA SHEET  
MOS FIELD EF2FESCTKTR2A1NS5IS8TOAR  
N-CHANNEL MOSFET  
FOR HIGH-SPEED SWITCHING  
The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can  
be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in low-  
voltage portable systems such as headphone stereo sets and camcorders.  
FEATURES  
• Capable of drive gate with 1.5 V  
PACKAGE DRAWING (Unit: mm)  
• Because of high input impedance, there is no need to consider  
driving current.  
• Bias resistance can be omitted, enabling reduction in total  
number of parts.  
ORDERING INFORMATION  
PART NUMBER  
2SK2158A-T1B-AT  
2SK2158A-T2B-AT  
PACKAGE  
SC-59 (Mini Mold)  
Marking: G23  
Remark “-AT” indicates Pb-free (This product does not contain  
Pb in external electrode and other parts.). “-T1B”, “-  
T2B” indicates the unit orientation (8 mm embossed  
carrier tape, 3,000 pcs/reel).  
1: Source  
2: Gate  
3: Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
50  
±7.0  
±0.1  
±0.2  
200  
V
V
A
Drain  
Drain Current (pulse) Note  
Total Power Dissipation  
Channel Temperature  
A
Body  
Diode  
Gate  
mW  
°C  
°C  
Tch  
150  
55 to +150  
Gate  
Storage Temperature  
Tstg  
Protection  
Diode  
Source  
Note PW 10 ms, Duty Cycle 50%  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17878EJ1V0DS00 (1st edition)  
Date Published February 2006 NS CP(K)  
Printed in Japan  
1996  

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