型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2159 | TYSEMI |
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Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.7 MAX.VGS = 1.5 V, ID = 0.1 A |
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2SK2159 | KEXIN |
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MOS Field Effect Transistor |
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2SK2159 | NEC |
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N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
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2SK2159-AZ | NEC |
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Power Field-Effect Transistor, 2A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal- |
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2SK215-E | RENESAS |
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Silicon N Channel MOS FET |
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2SK216 | HITACHI |
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Silicon N-Channel MOS FET |
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2SK216 | RENESAS |
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Silicon N Channel MOS FET |
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2SK2160 | SANYO |
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Very High-Speed Switching Applications |
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2SK2161 | SANYO |
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Very High-Speed Switching Applications |
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2SK2162 | TOSHIBA |
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N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
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