Datasheet > 2SK2159

2SK2159

更新时间： 2024-09-27 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲驱动
页数	文件大小	规格书
1页	114K
描述
Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.7 MAX.VGS = 1.5 V, ID = 0.1 A

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2SK2159 数据手册

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Product specification

2SK2159

SOT-89

Unit: mm

+0.1

4.50

-0.1

+0.1

1.50

-0.1

+0.1

1.80

-0.1

Features

Capable of drive gate with 1.5 V

Small R^DS(on)

0.53

R^DS(on)= 0.7

R^DS(on)= 0.3

MAX. @VGS = 1.5 V, ID = 0.1 A

MAX. @V^GS= 4.0 V, I^D= 1.0 A

+0.1

0.48

-0.1

+0.1

-0.1

+0.1

0.44

-0.1

1 Gate

1. Source

1. Base

+0.1

3.00

-0.1

2 Drain

2. Drain

2. Collector

3 Source

3. Emiitter

3. Gate

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

2.0

Drain current

I^dp*

P^D

4.0

Power dissipation

2.0

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10ms,Duty Cycle 50%

Electrical Characteristics Ta = 25

Parameter

Symbol

I^DSS

I^GSS

V^GS(off)V^DS=10V,I^D=1mA

Testconditons

V^DS=60V,V^GS=0

V^GS= 14V,V^DS=0

Min

Typ

0.9

Max

1.0

Unit

Drain cut-off current

Gate leakage current

Gate to source cutoff voltage

Forward transfer admittance

0.5

0.4

1.1

V^DS=10V,I^D=1.0A

V^GS=1.5V,I^D=0.1A

V^GS=2.5V,I^D=1.0A

V^GS=4.0V,I^D=1.0A

Y^fs

0.55

0.27

0.22

319

109

0.7

0.5

0.3

Drain to source on-state resistance

R^DS(on)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

C^oss

C^rss

t^d(on)

V^DS=10V,V^GS=0,f=1MHZ

128

237

130

I^D=1.0A,V^GS(on)=3V,R^L=25 ,R^G=10

,V^DD=25V

Turn-off delay time

Fall time

t^d(off)

Marking

http://www.twtysemi.com

sales@twtysemi.com

1 of 1

4008-318-123

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