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2SD2600

更新时间： 2024-11-21 04:26:19
品牌 Logo 应用领域
三洋 - SANYO 晶体驱动器晶体管达林顿晶体管
页数 文件大小 规格书
3页 37K
描述
NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications

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中文翻译

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2SD2600 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：100 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：1500JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：35 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：20 MHzBase Number Matches：1

2SD2600 数据手册

 浏览型号2SD2600的Datasheet PDF文件第2页浏览型号2SD2600的Datasheet PDF文件第3页 
Ordering number : EN8564  
SANYO Sem iconductors  
DATA S HEET  
NPN Triple Diffused Planar Silicon Darlington Transistor  
2SD2600  
Driver Applications  
Applications  
•
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.  
Features  
•
High DC current gain.  
•
Large current capacity and wide ASO.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
110  
100  
6
V
V
I
8
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
12  
35  
150  
A
CP  
P
Tc=25°C  
W
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
0.1  
I
V
V
V
V
=80V, I =0A  
mA  
mA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
I
=5V, I =0A  
3.0  
EBO  
C
DC Current Gain  
h
FE  
=3V, I =4A  
1500  
4000  
20  
C
Gain-Bandwidth Product  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Turn-ON Time  
f
T
=5V, I =4A  
MHz  
V
C
V
CE  
V
BE  
(sat)  
I
C
I
C
I
C
I
C
=4A, I =8mA  
0.9  
1.5  
2.0  
B
(sat)  
=4A, I =8mA  
V
B
V
V
=5mA, I =0A  
110  
100  
V
(BR)CBO  
(BR)CEO  
E
=50mA, R =∞  
BE  
V
t
See specified test circuit.  
See specified test circuit.  
See specified test circuit.  
0.6  
4.8  
1.6  
µs  
µs  
µs  
on  
Storage Time  
t
stg  
Fall Time  
t
f
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
73106IA MS IM TA-1084  
No.8564-1/3  
123

中文翻译

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