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2SD2620G PDF预览

2SD2620G

更新时间: 2024-11-30 21:06:27
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 221K
描述
Small Signal Bipolar Transistor, 0.02A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F3, 3 PIN

2SD2620G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.82最大集电极电流 (IC):0.02 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):400JESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SD2620G 数据手册

 浏览型号2SD2620G的Datasheet PDF文件第2页浏览型号2SD2620G的Datasheet PDF文件第3页浏览型号2SD2620G的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors  
2SD2620G  
Silicon NPN epitaxial planar type  
For low-frequency driver amplification  
Package  
Features  
Code  
High forward current transfer ratio hFE  
Low collector-emitter saturation voltage VCE(sat)  
High emitter-base voltage (Collector open) VEBO  
SSMini3-F3  
MarkinSymbol: 3B  
Pin
1: B
mit
Colector  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VCBO  
VCE
VEBO  
Rating  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
V
15  
2
mA  
A  
mW  
°C  
Peak collector current  
CP  
50  
Collector power dissipation  
Junction temperatur
PC  
125  
Tj  
15  
Storage temperatur
Tstg  
55 to +15  
°C  
Electricaracteristis Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
100  
100  
15  
Typ  
Max  
Unit  
V
Collector-base voltage (mitr opn)  
Collector-evoltae (Base oen)  
EmitteColletor open)  
Collector-bnt (Emitter open)  
Collector-emittecurrent (Base on)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Transition frequency  
IC = 10 µA, IE = 0  
IC = 1 mA, IB = 0  
V
IE = 10 µA, IC = 0  
VCB = 60 V, IE = 0  
VCE = 60 V, IB = 0  
VCE = 10 V, IC = 2 mA  
V
0.1  
1.0  
µA  
µA  
ICEO  
hFE  
400  
1200  
0.20  
VCE(sat) IC = 10 mA, IB = 1 mA  
0.05  
200  
80  
V
fT  
VCB = 10 V, IE = −2 mA, f = 200 MHz  
MHz  
mV  
Noise voltage  
NV  
VCE = 10 V, IC = 1 mA, GV = 80 dB  
Rg = 100 k, Funcion = FLAT  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: June 2007  
SJC00409AED  
1

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