5秒后页面跳转
2SD2641P PDF预览

2SD2641P

更新时间: 2024-09-29 13:04:23
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管
页数 文件大小 规格书
1页 29K
描述
暂无描述

2SD2641P 数据手册

  
Equivalent circuit  
C
E
B
Darlington 2 S D2 6 4 1  
(70)  
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)  
Application : Audio, Series Regulator and General Purpose  
Absolute maximum ratings (Ta=25°C)  
Electrical Characteristics  
(Ta=25°C)  
External Dimensions MT-100(TO3P)  
Ratings  
Ratings  
100max  
100max  
110min  
5000min  
2.5max  
3.0max  
60typ  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Symbol  
Conditions  
Unit  
µA  
µA  
V
Unit  
±0.2  
4.8  
±0.4  
15.6  
110  
ICBO  
VCB=110V  
V
±0.1  
2.0  
9.6  
110  
IEBO  
VEB=5V  
V
5
V(BR)CEO  
hFE  
IC=30mA  
V
a
b
±0.1  
ø3.2  
6
1
VCE=4V, IC=5A  
IC=5A, IB=5mA  
IC=5A, IB=5mA  
VCE=12V, IE=2A  
VCB=10V, f=1MHz  
A
IB  
VCE(sat)  
VBE(sat)  
fT  
V
V
A
PC  
60(Tc=25°C)  
150  
W
°C  
°C  
2
Tj  
MHz  
pF  
3
55typ  
Tstg  
COB  
–55 to +150  
+0.2  
-0.1  
+0.2  
-0.1  
1.05  
0.65  
1.4  
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)  
Typical Switching Characteristics (Common Emitter)  
±0.1  
±0.1  
5.45  
5.45  
B
C
E
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(mA)  
IB2  
(mA)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
Weight : Approx 6.0g  
a. Part No.  
30  
6
5
10  
–5  
5
–5  
0.8typ  
6.2typ  
1.1typ  
b. Lot No.  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=4V)  
6
6
4
2
0
3
4
2
0
2
IC=5A  
1
IC=3A  
IB=0.1mA  
0
0
2
4
6
0.1  
0.5  
1
5
10  
50 100  
0
1
2
2.5  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=4V)  
(VCE=4V)  
5
50000  
50000  
125˚C  
T y p  
10000  
5000  
10000  
25˚C  
5000  
–30˚C  
1000  
500  
1000  
1
500  
0.5  
100  
0.01  
100  
0.01  
1
5
10  
50 100  
Time t(ms)  
500 1000 2000  
0.1  
0.5  
1
5 6  
0.1  
0.5  
1
5 6  
Collector Current IC(A)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=12V)  
60  
40  
20  
80  
60  
20  
10  
5
Typ  
40  
1
0.5  
20  
0
Without Heatsink  
Natural Cooling  
0.1  
Without Heatsink  
3.5  
0
0.05  
–0.02  
–0.1  
–1  
–6  
3
5
10  
50  
100  
200  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Emitter Current IE(A)  
Ambient Temperature Ta(˚C)  
160  

与2SD2641P相关器件

型号 品牌 获取价格 描述 数据表
2SD2641Y SANKEN

获取价格

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2641Y ALLEGRO

获取价格

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2642 ISC

获取价格

Silicon NPN Darlington Power Transistor
2SD2642 SANKEN

获取价格

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
2SD2642O ISC

获取价格

Transistor
2SD2642P ISC

获取价格

Transistor
2SD2642Y ISC

获取价格

Transistor
2SD2643 SANKEN

获取价格

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
2SD2643O SANKEN

获取价格

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2643P ALLEGRO

获取价格

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,