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2SD2636 PDF预览

2SD2636

更新时间: 2024-11-20 21:10:19
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网开关晶体管
页数 文件大小 规格书
5页 264K
描述
TRANSISTOR 8 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power

2SD2636 技术参数

生命周期:Lifetime Buy包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.51
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:160 V配置:DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):5000JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):100 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):35 MHz
Base Number Matches:1

2SD2636 数据手册

 浏览型号2SD2636的Datasheet PDF文件第2页浏览型号2SD2636的Datasheet PDF文件第3页浏览型号2SD2636的Datasheet PDF文件第4页浏览型号2SD2636的Datasheet PDF文件第5页 
2SD2636  
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)  
2SD2636  
Power Amplifier Applications  
Unit: mm  
High-Power Switching Applications  
High-breakdown voltage: V  
= 160 V (min)  
CEO  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
160  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
160  
5
DC  
I
8
C
Collector current  
A
Pulse  
I
15  
1
CP  
1.Base  
Base current  
I
A
B
2.Collector(heatsink)  
3.Emitter  
Collector power dissipation(Tc=25℃)  
Junction temperature  
P
100  
W
°C  
°C  
C
T
150  
j
JEDEC  
Storage temperature range  
T
stg  
55 to 150  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-16C1A  
Weight: 4.7 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Equivalent Circuit  
Collector  
Base  
30 Ω  
Emitter  
1
2010-10-04  

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