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2SD2641 PDF预览

2SD2641

更新时间: 2024-11-18 19:47:59
品牌 Logo 应用领域
急速微 - ALLEGRO 局域网开关晶体管
页数 文件大小 规格书
1页 26K
描述
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN

2SD2641 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-3P
包装说明:MT-100, TO-3P, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.4其他特性:BUILT IN RESISTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:110 V
配置:DARLINGTON WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):5000
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

2SD2641 数据手册

  
Equivalent circuit  
C
E
B
Darlington 2 S D2 6 4 1  
(70)  
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)  
Application : Audio, Series Regulator and General Purpose  
Absolute maximum ratings (Ta=25°C)  
Electrical Characteristics  
(Ta=25°C)  
External Dimensions MT-100(TO3P)  
Ratings  
Ratings  
100max  
100max  
110min  
5000min  
2.5max  
3.0max  
60typ  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Symbol  
Conditions  
Unit  
µA  
µA  
V
Unit  
±0.2  
4.8  
±0.4  
15.6  
110  
ICBO  
VCB=110V  
V
±0.1  
2.0  
9.6  
110  
IEBO  
VEB=5V  
V
5
V(BR)CEO  
hFE  
IC=30mA  
V
a
b
±0.1  
ø3.2  
6
1
VCE=4V, IC=5A  
IC=5A, IB=5mA  
IC=5A, IB=5mA  
VCE=12V, IE=2A  
VCB=10V, f=1MHz  
A
IB  
VCE(sat)  
VBE(sat)  
fT  
V
V
A
PC  
60(Tc=25°C)  
150  
W
°C  
°C  
2
Tj  
MHz  
pF  
3
55typ  
Tstg  
COB  
–55 to +150  
+0.2  
-0.1  
+0.2  
-0.1  
1.05  
0.65  
1.4  
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)  
Typical Switching Characteristics (Common Emitter)  
±0.1  
±0.1  
5.45  
5.45  
B
C
E
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(mA)  
IB2  
(mA)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
Weight : Approx 6.0g  
a. Part No.  
30  
6
5
10  
–5  
5
–5  
0.8typ  
6.2typ  
1.1typ  
b. Lot No.  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=4V)  
6
6
4
2
0
3
4
2
0
2
IC=5A  
1
IC=3A  
IB=0.1mA  
0
0
2
4
6
0.1  
0.5  
1
5
10  
50 100  
0
1
2
2.5  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=4V)  
(VCE=4V)  
5
50000  
50000  
125˚C  
T y p  
10000  
5000  
10000  
25˚C  
5000  
–30˚C  
1000  
500  
1000  
1
500  
0.5  
100  
0.01  
100  
0.01  
1
5
10  
50 100  
Time t(ms)  
500 1000 2000  
0.1  
0.5  
1
5 6  
0.1  
0.5  
1
5 6  
Collector Current IC(A)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=12V)  
60  
40  
20  
80  
60  
20  
10  
5
Typ  
40  
1
0.5  
20  
0
Without Heatsink  
Natural Cooling  
0.1  
Without Heatsink  
3.5  
0
0.05  
–0.02  
–0.1  
–1  
–6  
3
5
10  
50  
100  
200  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Emitter Current IE(A)  
Ambient Temperature Ta(˚C)  
160  

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