2SD2652

更新时间： 2024-02-22 21:19:54

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	76K
描述
General purpose amplification (12V, 1.5A)

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技术参数
数据手册

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2SD2652 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.55	Is Samacsys：	N
最大集电极电流 (IC)：	1.5 A	配置：	Single
最小直流电流增益 (hFE)：	270	JESD-609代码：	e1
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
Base Number Matches：	1

2SD2652 数据手册

2SD2652

Transistors

General purpose amplification (12V, 1.5A)

2SD2652

!External dimensions (Units : mm)

!Application

Low frequency amplifier

!Features

1.25

2.1

1) A collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)≤ 200mV

0.1Min.

At I^C= 500mA / IB = 25mA

Each lead has same dimensions

ROHM : UMT3

EIAJ : SC-70

(1) Emitter

(2) Base

Abbreviated symbol : EW

JEDEC : SOT-323

(3) Collector

!Packaging specifications

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

Package

Taping

VCBO

VCEO

VEBO

Code

T106

3000

Basic ordering unit (pieces)

Type

1.5

2SD2652

Collector current

∗

Power dissipation

200

°C

Junction temperature

150

Range of storage temperature Tstg

−55~+150

∗Single pulse, P =1ms

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BVCBO

−

=10µA

=1mA

Collector-emitter breakdown voltage BV^CEO

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

BV^EBO

−

=10µA

CBO

EBO

CE(sat)

−

100

CB=15V

−

VEB=6V

Collector-emitter saturation voltage

DC current gain

−

80 200 mV

=500mA/25mA

=2V/200mA

CE=2V, I =−200mA, f=100MHz

CB=10V, I =0A, f=1MHz

∗

270

−

680

−

CE/IC

∗

Transition frequency

400

MHz

Corrector output capacitance

Cob

−

∗1 Pulsed

12 3

中文翻译

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