生命周期: | Not Recommended | 零件包装代码: | SC-59A |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.48 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.8 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 280 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2655_11 | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier | |
2SD2655WM-TL-E | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier | |
2SD2655WM-TL-H | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier | |
2SD2656 | ROHM |
获取价格 |
General purpose amplification (30V, 1A) | |
2SD2656_13 | ROHM |
获取价格 |
NPN 1A 30V Low Frequency Amplifier Transistors | |
2SD2656FRAT106 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP | |
2SD2656T106 | ROHM |
获取价格 |
NPN 1A 30V Low Frequency Amplifier Transistors | |
2SD2657 | ROHM |
获取价格 |
Low frequency amplifier | |
2SD2657_1 | ROHM |
获取价格 |
Low frequency amplifier | |
2SD2657K | ROHM |
获取价格 |
Low frequency amplifier |