Datasheet > 2SD2662

2SD2662

更新时间： 2024-11-18 00:00:47

品牌	Logo	应用领域
罗姆 - ROHM		放大器
页数	文件大小	规格书
3页	91K
描述
Low frequency amplifier

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中文翻译

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2SD2662 数据手册

2SD2662

Transistors

Low frequency amplifier

2SD2662

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

4.0

2.5

1.0

0.5

(1)

(2)

zFeatures

1) A collector current is large.

2) V^CE(sat)≦ 350mV

At I^C= 1A / IB = 50mA

(3)

(1)Base

ROHM : MPT3

(2)Collector

(3)Emitter

JEITA : SC-62

JEDEC: SOT-89

Abbreviated symbol : FZ

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

1.5

500

2 ^∗2

Unit

A^∗1

Package

Taping

T100

VCBO

VCEO

VEBO

Type

Code

Basic ordering unit (pieces)

Collector-emitter voltage

Emitter-base voltage

1000

Collector current

Power dissipation

2SD2662

Junction temperature

Tstg

150

−55 to +150

°C

Range of storage temperature

∗1 Single pulse, P

=1ms

∗2 Mounted on a 40

^t0.7mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

−

160

−

330

Max.

−

Unit

Conditions

BV^CBO

BVCEO

BV^EBO

=10µA

=1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut off current

−

=10µA

CB=30V

EB=6V

CBO

EBO

CE(sat)

−

270

−

100

350

680

−

MHz

Emitter cut off current

=1A, I =50mA

Collector-emitter saturation voltage

DC current gain

CE=2V, I

=100mA^∗

=−100mA, f=100MHz^∗

Transition frequency

CB=10V, I

E=0A, f=1MHz

Cob

−

Corrector output capacitance

∗ Pulsed

Rev.A

1/2

12 3

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