Datasheet > 2SD2675U

2SD2675U

更新时间： 2024-10-01 14:53:03

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	250K
描述
功率三极管

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2SD2675U 数据手册

2SD2675U

NPN Silicon Epitaxial Planar Power Transistors

Features

• Low V_CEsat

Applications

• Low Frequency Amplifier

• Driver

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Collector Current (P_W=10 ms, single Pulse)

I_CM

0.5 ¹⁾

Power Dissipation

P_tot

1 ²⁾

℃

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

250 ¹⁾

Thermal Resistance from Junction to Ambient

℃/W

125 ²⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

^{2 )}Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate

1 / 5

Dated: 02/05/2023 Rev: 02

12 3 4 5

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