Datasheet > 2SD2670_1

2SD2670_1

更新时间： 2024-11-21 06:24:51

品牌	Logo	应用领域
罗姆 - ROHM		放大器
页数	文件大小	规格书
3页	57K
描述
Low frequency amplifier

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中文翻译

获取价格

数据手册

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2SD2670_1 数据手册

2SD2670

Transistors

Low frequency amplifier

2SD2670

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

TSMT3

1.0MAX

2.9

0.4

0.85

0.7

(

)

zFeatures

1) A collector current is large.

2) V_CE(sat): max.250mV

At lc=1.5A / l_B=30mA

( )

0.95 0.95

1.9

0.16

(1) Base

(2) Emitter

(3) Collector

Each lead has same dimensions

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

500

1 ^∗2

Collector current

Power siddipation

A^∗1

Junction temperature

Range of storage temperature

∗1 Single pulse, Pw=1ms

Tstg

150

−55 to +150

°C

∗2 Mounted on a 25×25×^t0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BV^CEO

BV^EBO

Min.

Typ.

−

120

−

360

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

=10µA

=1mA

−

=10µA

CB=15V

EB=6V

CBO

EBO

CE(sat)

−

270

−

100

250

680

−

MHz

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

=1.5A, I

CE=2V, I

=30mA

=500mA^∗

=−500mA, f=100MHz^∗

Transition frequency

CB=10V, I

E=0A, f=1MHz

Collector output capacitance

Cob

−

∗ Pulse

Rev.C

1/2

12 3

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