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2SD2670_1 PDF预览

2SD2670_1

更新时间: 2024-11-03 06:24:51
品牌 Logo 应用领域
罗姆 - ROHM 放大器
页数 文件大小 规格书
3页 57K
描述
Low frequency amplifier

2SD2670_1 数据手册

 浏览型号2SD2670_1的Datasheet PDF文件第2页浏览型号2SD2670_1的Datasheet PDF文件第3页 
2SD2670  
Transistors  
Low frequency amplifier  
2SD2670  
zExternal dimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
Driver  
TSMT3  
1.0MAX  
2.9  
0.4  
0.85  
0.7  
(
(
)
)
3
zFeatures  
1) A collector current is large.  
2) VCE(sat) : max.250mV  
At lc=1.5A / lB=30mA  
( )  
2
1
0.95 0.95  
1.9  
0.16  
(1) Base  
(2) Emitter  
(3) Collector  
Each lead has same dimensions  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
15  
12  
6
Unit  
V
V
VCBO  
VCEO  
VEBO  
V
I
C
3
6
500  
1 2  
A
Collector current  
Power siddipation  
I
CP  
A1  
mW  
W
P
C
Junction temperature  
Range of storage temperature  
1 Single pulse, Pw=1ms  
Tj  
Tstg  
150  
55 to +150  
°C  
°C  
2 Mounted on a 25×25×t 0.8mm Ceramic substrate  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
120  
360  
30  
Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
15  
12  
6
I
I
I
C
=10µA  
=1mA  
V
C
V
E
=10µA  
CB=15V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
100  
100  
250  
680  
nA  
nA  
mV  
MHz  
pF  
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current gain  
V
I
C
=1.5A, I  
CE=2V, I  
CE=2V, I  
B
=30mA  
=500mA∗  
=−500mA, f=100MHz∗  
h
V
V
V
C
Transition frequency  
f
T
E
CB=10V, I  
E=0A, f=1MHz  
Collector output capacitance  
Cob  
Pulse  
Rev.C  
1/2  

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