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2SD2688LS

更新时间： 2024-11-03 00:00:47
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管电视输出应用放大器局域网
页数 文件大小 规格书
4页 33K
描述
Color TV Horizontal Deflection Output Applications

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中文翻译

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2SD2688LS 技术参数

生命周期：Transferred零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.46其他特性：HIGH RELIABILITY
外壳连接：ISOLATED最大集电极电流 (IC)：10 A
集电极-发射极最大电压：800 V配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：5JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
最大功率耗散 (Abs)：35 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

2SD2688LS 数据手册

 浏览型号2SD2688LS的Datasheet PDF文件第2页浏览型号2SD2688LS的Datasheet PDF文件第3页浏览型号2SD2688LS的Datasheet PDF文件第4页 
Ordering number : ENN7526  
NPN Triple Diffused Planar Silicon Transistor  
2SD2688LS  
Color TV Horizontal Deflection  
Output Applications  
Features  
Package Dimensions  
unit : mm  
2079D  
•
High speed.  
•
High breakdown voltage(V  
=1500V).  
CBO  
•
High reliability(Adoption of HVP process).  
Adoption of MBIT process.  
On-chip damper diode.  
[2SD2688LS]  
•
•
10.0  
4.5  
3.2  
2.8  
0.9  
1.2  
1.2  
0.75  
0.7  
1 : Base  
1
2
3
2 : Collector  
3 : Emitter  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
2.55  
2.55  
SANYO : TO-220FI(LS)  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
1500  
800  
5
V
V
I
10  
A
C
Collector Current (Pulse)  
I
25  
A
CP  
2.0  
35  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
10  
I
V
V
=800V, I =0  
µA  
mA  
V
CBO  
CB  
E
Collector Cutoff Current  
Collector Sustain Voltage  
Emitter Cutoff Current  
I
=1500V, R =0  
BE  
1.0  
CES  
(sus)  
CE  
V
I
C
=100mA, I =0  
800  
40  
CEO  
B
I
V
BE  
=4V, I =0  
130  
mA  
EBO  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
No.7526-1/4  
N2503 TS IM TA-4043  
1234

中文翻译

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2SD2693AP PANASONIC

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 		Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2695 TOSHIBA

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