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2SD2691A

更新时间： 2024-10-01 07:14:39
品牌 Logo 应用领域
松下 - PANASONIC 放大器晶体管
页数 文件大小 规格书
3页 423K
描述
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, MT-4-A1, 3 PIN

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2SD2691A 技术参数

生命周期：Obsolete包装说明：IN-LINE, R-PSIP-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
最大集电极电流 (IC)：3 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：10
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：30 MHz
Base Number Matches：1

2SD2691A 数据手册

 浏览型号2SD2691A的Datasheet PDF文件第2页浏览型号2SD2691A的Datasheet PDF文件第3页 
This product complies with RoHS Directive (EU 2002/95/EC).  
Power Transistors  
2SD2691A  
Silicon NPN triple diffusion planar type  
For power amplification  
Unit: mm  
Complementary to 2SB1725A  
10.0±0.2  
5.0±0.1  
1.0±0.2  
Features  
Wide safe operation area  
Satisfactory linearity of forward current transfer ratio hFE  
Low collector-emitter saturation voltage VCE(sat)  
1.2±0.1  
C 1.0  
1.48±0.2  
2.25±0.2  
Absolute Maximum Ratings T
a
= 25
°
C  
1  
0.65±0.1  
Parameter  
Symbol  
VCBO  
Ratin
Unit  
V
1.05±01  
0.55±0.1  
0.55±0.1  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
8
2.5±0.2  
2.5±0.2  
VCEO  
V
1
2 3  
VEO  
V
Collector current  
IC  
3
A
1: Base  
2: Collector  
3: Emitter  
Peak collector current
*  
ICP  
20  
A
W
W
°
C  
°
C  
MT-4-A1 Package  
TC = 2
°
C  
Collector power dissipation  
PC  
T
Marking Symbol: D2691A  
2.0  
Internal Connection  
Junction temperature  
Storage temperature  
150  
T
5 to +150  
C
Note) : -repetitivollector currnt  
*
B
E
Electrical Charistics T
a
= 25
°
C±3
°
C  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
Collector-emitter volopen)  
Collector-base cutoff currnt (Emitter open)  
Collector-emitter cutoff current (Base open)  
VCEO IC = 30 mA, IB = 0  
80  
ICBO  
ICEO  
IEBO  
VCB = 80 V, I
E
= 0  
VCE = 80 V, IB = 0  
VEB = 6 V, I
C
= 0  
VCE = 4 V, I
C
1 A  
VCE = 4 V, I
C
3 A  
100  
100  
1
µA  
µA  
mA  
1
Emitter-base cutoff current (Collector open)
*  
*2  
hFE1  
hFE2  
70  
10  
250  
1
Forward current transfer ratio
*  
1
Collector-emitter saturation voltage
*  
VCE(sat) IC = 3A, IB = 0.375A  
1.1  
V
MHz  
µs  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCB = 10 V, IC = 0.5A, f = 10 MHz  
30  
0.1  
2.3  
0.3  
IC = 1A, Resistance loaded  
IB1 = 0.1A, IB2
−
0.1A  
V
CC
= 50 V  
µs  
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
Q
R
hFE1  
70 to 150  
120 to 250  
Publication date: September 2006  
SJD00324AED  
1
123

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