Datasheet > 2SD2675_1

2SD2675_1

更新时间： 2024-11-03 06:25:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	64K
描述
General purpose amplification (30V, 1A)

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中文翻译

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数据手册

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2SD2675_1 数据手册

2SD2675

Transistors

General purpose amplification (30V, 1A)

2SD2675

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

TSMT3

1.0MAX

2.9

0.85

zFeatures

0.7

0.4

(

)

1) A collector current is large.

2) Collector saturation voltage is low.

( )

VCE(sat) : max.350mV

0.95 0.95

1.9

0.16

At IC

= 500mA / I = 25mA

(1) Base

(2) Emitter

(3) Collector

Each lead has same dimensions

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

Package

Taping

VCBO

VCEO

VEBO

Type

Code

Basic ordering unit (pieces)

3000

2SD2675

Collector current

∗1

500

Power dissipation

∗

Junction temperature

150

−55 to +150

°C

Range of storage temperature Tstg

°C

∗

1Single pulse, P

=1ms

∗

2Mounted on a 25

25×^t0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BVCBO

−

=10µA

=1mA

Collector-emitter breakdown voltage BV^CEO

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

BV^EBO

−

=10µA

CBO

EBO

CE(sat)

−

100

CB=30V

−

VEB=6V

Collector-emitter saturation voltage

DC current gain

−

120 350 mV

=500mA/25mA

=2V/100mA

CE=2V, I =−100mA, f=100MHz

CB=10V, I =0A, f=1MHz

∗

270

−

320

680

−

CE/IC

Transition frequency

MHz

Corrector output capacitance

Cob

−

∗ Pulsed

Rev.B

1/2

12 3

中文翻译

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