Datasheet > 2SD2672_1

2SD2672_1

更新时间： 2024-09-30 04:26:19

品牌	Logo	应用领域
罗姆 - ROHM		放大器
页数	文件大小	规格书
3页	92K
描述
Low frequency amplifier

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中文翻译

获取价格

数据手册

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2SD2672_1 数据手册

2SD2672

Transistors

Low frequency amplifier

2SD2672

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

TSMT3

1.0MAX

2.9

0.4

0.85

0.7

(

)

zFeatures

1) A collector current is large. (4A)

2) V^CE(sat)≦ 250mV

( )

0.95 0.95

1.9

0.16

At IC

= 2A / I = 40mA

(1) Base

(2) Emitter

(3) Collector

Each lead has same dimensions

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

500

1^∗2

Unit

A^∗1

Package

Taping

VCBO

VCEO

VEBO

Code

Type

Collector-emitter voltage

Emitter-base voltage

Basic ordering unit (pieces)

3000

2SD2672

Collector current

Power dissipation

Junction temperature

Tstg

150

−55 to +150

°C

Range of storage temperature

∗1 Single pulse, P

=1ms

∗2 Mounted on a 25

^t0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BVCBO

BV^CEO

BV^EBO

Min.

Typ.

−

250

Max.

−

Unit

Conditions

=10µA

=1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=10µA

CB=15V

EB=6V

CBO

EBO

CE(sat)

−

270

−

100

250

680

−

MHz

Emitter cutoff current

=2A, I =40mA

Collector-emitter saturation voltage

DC current gain

CE=2V, I

=200mA^∗

=−200mA, f=100MHz^∗

Transition frequency

CB=10V, I

=0A, f=1MHz

Cob

−

Corrector output capacitance

∗ Pulsed

Rev.C

1/2

12 3

中文翻译

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