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2SD2687STP PDF预览

2SD2687STP

更新时间: 2024-11-03 13:02:51
品牌 Logo 应用领域
罗姆 - ROHM 放大器
页数 文件大小 规格书
3页 67K
描述
Small Signal Bipolar Transistor, 5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon

2SD2687STP 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8Is Samacsys:N
最大集电极电流 (IC):5 A集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):350
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):360 MHzBase Number Matches:1

2SD2687STP 数据手册

 浏览型号2SD2687STP的Datasheet PDF文件第2页浏览型号2SD2687STP的Datasheet PDF文件第3页 
2SD2687S  
Transistors  
Low frequency amplifier, storobo  
2SD2687S  
zExternal dimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
Storobo  
4.0  
2.0  
0.45  
2.5  
zFeatures  
1) A collector current is large.  
2) VCE(sat) 250mV  
At lc=1.5A / lB=30mA  
0.45  
0.5  
5.0  
(1) (2) (3)  
(1)Emitter(GND)  
(2)Collector(OUT)  
(3)Base(IN)  
Taping specifications  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
15  
12  
6
Unit  
V
V
VCBO  
VCEO  
VEBO  
V
I
C
5
8
400  
A
Collector current  
I
CP  
A ∗  
mW  
°C  
°C  
Power siddipation  
Junction temperature  
Range of storage temperature  
PC  
Tj  
150  
Tstg  
55 to +150  
Single pulse, Pw=10ms  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
120  
360  
30  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
15  
12  
6
100  
100  
250  
680  
V
V
I
I
I
C
=10µA  
=1mA  
C
V
E
=10µA  
CB=15V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
350  
nA  
nA  
mV  
MHz  
pF  
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current gain  
V
I
C
=1.5A, I  
CE=2V, I  
CE=2V, I  
B
=30mA  
=500mA∗  
=−500mA, f=100MHz∗  
=0A, f=1MHz  
h
V
V
V
C
Transition frequency  
f
T
E
CB=10V, I  
E
Collector output capacitance  
Cob  
Pulse  
1/2  

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