Datasheet > 2SD2678

2SD2678

更新时间： 2024-11-03 04:26:19

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	96K
描述
3A / 12V Bipolar transistor

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2SD2678 数据手册

2SD2678

Transistors

3A / 12V Bipolar transistor

2SD2678

zApplications

zExternal dimensions (Unit : mm)

Low frequency amplification, driver

MPT3

4.5

1.6

1.5

zFeatures

1) Collector current is high.

2) Low collector-emitter saturation voltage.

(V^CE(sat)≤ 250mV at IC = 1.5A, IB = 30mA)

(1)

(2)

(3)

0.4

0.5

3.0

0.4

1.5

(1)Base

(2)Collector

(3)Emitter

zStructure

Abbreviated symbol : XX

NPN epitaxial planar silicon transistor

zAbsolute maximum ratings (Ta=25°C)

zPackaging specifications

Package

Parameter

Symbol

Limits

Unit

MPT3

Taping

T100

Packaging type

Code

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

Part No.

Basic ordering unit (pieces) 1000

2SD2678

Collector current

∗1

Pulse

0.5 ∗2

Power dissipation

∗3

Junction temperature

150

°C

Storage temperature

Tstg

−55 to +150

∗1 Pw=1ms, Pulsed.

∗2 Each terminal mounted on a recommended land.

∗3 Mounted on a 40×40×0.7mm ceramic board.

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BVCEO

BV^CBO

BVEBO

Min. Typ. Max. Unit

Conditions

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

−

=1mA

C=10µA

=10µA

CB=15V

EB=6V

CBO

−

100

Emitter cut-off current

EBO

Collector-emitter saturation voltage

DC current gain

CE(sat)

−

270

120 250 mV

IC/IB=1.5A/30mA

∗

hFE

−

680

−

CE=2V, I

=500mA

= −500mA , f=100MHz

CB=10V , IE=0mA , f=1MHz

∗

Transition frequency

−

360

−

MHz

CE=2V, IE

Collector output capacitance

Cob

∗ Pulsed

1/2

12 3

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