Datasheet > 2SD2686(TE12L,F)

2SD2686(TE12L,F)

更新时间： 2024-11-03 14:50:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	176K
描述
TRANSISTOR,BJT,PAIR,DARLINGTON,NPN,50V V(BR)CEO,1A I(C),SC-62

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技术参数
数据手册

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2SD2686(TE12L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	最大集电极电流 (IC)：	1 A
配置：	2 BANKS, DARLINGTON	最小直流电流增益 (hFE)：	2000
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	2.5 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SD2686(TE12L,F) 数据手册

2SD2686

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)

2SD2686

Solenoid Drive Applications

Motor Drive Applications

Unit: mm

•

High DC current gain: h = 2000 (min) (V

= 2 A, I = 1 A)

CE C

Zener diode included between collector and base

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

60±10

Collector current

Base current

Pulse

0.5

1.0

Collector power

dissipation

(Note 1)

t = 10 s

2.5

JEDEC

JEITA

―

Junction temperature

150

°C

SC-62

2-5K1A

Storage temperature range

stg

−55 to 150

TOSHIBA

Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,

645 mm²)

Weight: 0.05 g (typ.)

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Equivalent Circuit

Collector

Emitter

Base

5kΩ

≒

300Ω

≒

2006-11-21

12 3 4 5

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