Datasheet > 2SD2655_11

2SD2655_11

更新时间： 2024-11-18 12:53:35

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
7页	107K
描述
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

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数据手册

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2SD2655_11 数据手册

Preliminary Datasheet

2SD2655

R07DS0281EJ0300

(Previous: REJ03G0810-0200)

Rev.3.00

Silicon NPN Epitaxial Planer

Low Frequency Power Amplifier

Mar 28, 2011

Features

•

Small size package: MPAK (SC–59A)

Large Maximum current: I_C= 1 A

Low collector to emitter saturation voltage: V_CE(sat)= 0.3 V max.(at I_C/I_B= 0.5 A/0.05 A)

High power dissipation: P_C= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))

Complementary pair with 2SB1691

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Emitter

2. Base

3. Collector

Note: Marking is “WM-“.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to Base Voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

Ratings

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector peak current

Collector power dissipation

Junction temperature

ic(peak)

P_C

800*

°C

150

Storage temperature

Tstg

−55 to +150

Note:

*When using alumina ceramic board (25 x 60 x 0.7 mm)

R07DS0281EJ0300 Rev.3.00

Mar 28, 2011

Page 1 of 5

12 3 4 5 6 7

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