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2SD2657KT146 PDF预览

2SD2657KT146

更新时间: 2024-11-18 12:52:39
品牌 Logo 应用领域
罗姆 - ROHM 晶体放大器小信号双极晶体管光电二极管PC
页数 文件大小 规格书
3页 80K
描述
Low frequency amplifier

2SD2657KT146 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-59
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.74Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:471541
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SC-59 JEDEC : SOT-346
Samacsys Released Date:2020-05-11 06:19:53Is Samacsys:N
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):270
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN SILVER COPPER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):330 MHz
Base Number Matches:1

2SD2657KT146 数据手册

 浏览型号2SD2657KT146的Datasheet PDF文件第2页浏览型号2SD2657KT146的Datasheet PDF文件第3页 
2SD2657K  
Transistors  
Low frequency amplifier  
2SD2657K  
!External dimensions (Units : mm)  
!Application  
Low frequency amplifier  
Driver  
1.6  
!Features  
2.8  
1) A collector current is large.  
2) VCE(sat) 350mV  
At IC = 1A / IB = 50mA  
0.3Min.  
Each lead has same dimensions  
ROHM : SMT3  
EIAJ : SC-59  
Abbreviated symbol : FZ  
(1) Emitter  
(2) Base  
JEDEC : SOT-346  
(3) Collector  
!Packaging specifications  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
30  
30  
6
1.5  
3
200  
150  
Unit  
V
V
V
A
A ∗  
mW  
°C  
°C  
Package  
Taping  
T146  
VCBO  
VCEO  
VEBO  
Code  
Type  
Collector-emitter voltage  
Emitter-base voltage  
Basic ordering unit (pieces)  
3000  
2SD2657K  
I
C
Collector current  
I
CP  
P
C
Power dissipation  
Junction temperature  
Tj  
Tstg  
Range of storage temperature  
55~+150  
Single pulse, P =1ms  
W
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
160  
330  
11  
Max.  
Unit  
V
Conditions  
30  
30  
6
I
I
I
C
=10µA  
=1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C
V
E
=10µA  
CB=30V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
100  
100  
350  
680  
nA  
nA  
mV  
MHz  
pF  
V
V
I
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current gain  
V
I
C=1A, I  
B
=50mA  
h
V
V
V
CE=2V, I  
CE=2V, I  
C
=100mA∗  
fT  
E
=−100mA, f=100MHz∗  
=0A, f=1MHz  
Transition frequency  
CB=10V, I  
E
Cob  
Corrector output capacitance  
Pulsed  
1/2  

2SD2657KT146 替代型号

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