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QSX6TR PDF预览

QSX6TR

更新时间: 2024-11-21 13:12:39
品牌 Logo 应用领域
罗姆 - ROHM 放大器
页数 文件大小 规格书
3页 70K
描述
Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,

QSX6TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.77最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):270JESD-30 代码:R-PDSO-G6
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

QSX6TR 数据手册

 浏览型号QSX6TR的Datasheet PDF文件第2页浏览型号QSX6TR的Datasheet PDF文件第3页 
QSX6  
Transistors  
Low frequency amplifier  
QSX6  
zExternal dimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
Driver  
2.8  
1.6  
zFeatures  
1) A collector current is large.  
2) VCE(sat)  
350mV  
At IC = 1A / IB = 50mA  
Each lead has same dimensions  
Abbreviated symbol : X06  
zEquivalent circuit  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
30  
30  
6
1.5  
Unit  
V
V
V
A
(6)  
(5)  
(4)  
VCBO  
VCEO  
VEBO  
Collector-emitter voltage  
Emitter-base voltage  
I
C
Collector current  
Power dissipation  
1  
2  
3  
I
CP  
3
A
500  
1.25  
150  
55 to +150  
mW  
W
°C  
°C  
P
C
(1)  
(2)  
(3)  
Junction temperature  
Tj  
Tstg  
Range of storage temperature  
Single pulse, P =1ms  
Each Terminal Mounted on a Recommended  
t
Mounted on a 25mm×25mm× 0.8mm Ceramic substrate  
W
1  
2  
3  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
30  
30  
6
140  
300  
11  
I
I
I
C
=10µA  
=1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C
V
E
=10µA  
CB=30V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
100  
100  
350  
680  
nA  
nA  
mV  
MHz  
pF  
V
V
I
Emitter cutoff current  
V
I
C=1A, I  
B
=50mA  
Collector-emitter saturation voltage  
DC current gain  
h
V
V
V
CE=2V, I  
CE=2V, I  
C
=100mA∗  
f
T
E
=−100mA, f=100MHz∗  
Transition frequency  
CB=10V, I  
E=0A, f=1MHz  
Cob  
Collector output capacitance  
Pulsed  
Rev.A  
1/2  

QSX6TR 替代型号

型号 品牌 替代类型 描述 数据表
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