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QSX8 PDF预览

QSX8

更新时间: 2024-11-04 09:51:03
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
3页 70K
描述
General purpose amplification (30V, 1A)

QSX8 数据手册

 浏览型号QSX8的Datasheet PDF文件第2页浏览型号QSX8的Datasheet PDF文件第3页 
QSX8  
Transistors  
General purpose amplification (30V, 1A)  
QSX8  
zExternal dimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
2.8  
1.6  
zFeatures  
1) Collector current is large.  
2) Collector saturation voltage is low.  
VCE (sat)  
350mV  
at Ic= 500mA / IB= 25mA  
ROHM : TSMT6  
Each lead has same dimensions  
Abbreviated symbol : X08  
zEquivalent Circuit  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
V
(6)  
(5)  
(4)  
VCBO  
VCEO  
VEBO  
30  
30  
6
V
V
I
C
1
A
Collector current  
1
I
CP  
2
A
2  
3  
3  
500  
1.25  
mW/TOTAL  
W/TOTAL  
W/ELEMENT  
°C  
(1)  
(2)  
(3)  
Power dissipation  
PC  
0.9  
Junction temperature  
Tj  
150  
Range of storage temperature Tstg  
55 to +150  
°C  
Single pulse, P  
W
=1ms  
1
2
3
Each Terminal Mounted on a Recommended  
t
Mounted on a 25mm×25mm× 0.8mm Ceramic substrate  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
30  
30  
6
V
V
I
I
I
C
=10µA  
=1mA  
Collector-emitter breakdown voltage BVCEO  
C
Emitter-base breakdown voltage  
Collector cutoff current  
Emitter cutoff current  
BVEBO  
V
E
=10µA  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
nA  
nA  
V
CB=30V  
I
VEB=6V  
Collector-emitter saturation voltage  
DC current gain  
V
120 350 mV  
I
C
/I  
B
=500mA/25mA  
=2V/100mA  
CE=2V, I =−100mA, f=100MHz  
CB=10V, I =0A, f=1MHz  
h
270  
320  
7
680  
V
V
V
CE/IC  
Transition frequency  
f
T
MHz  
pF  
E
Collector output capacitance  
Cob  
E
Pulsed  
Rev.A  
1/2  

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