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2SD2655WM-TL-E PDF预览

2SD2655WM-TL-E

更新时间: 2024-11-04 06:25:03
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器功率放大器
页数 文件大小 规格书
6页 69K
描述
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

2SD2655WM-TL-E 数据手册

 浏览型号2SD2655WM-TL-E的Datasheet PDF文件第2页浏览型号2SD2655WM-TL-E的Datasheet PDF文件第3页浏览型号2SD2655WM-TL-E的Datasheet PDF文件第4页浏览型号2SD2655WM-TL-E的Datasheet PDF文件第5页浏览型号2SD2655WM-TL-E的Datasheet PDF文件第6页 
2SD2655  
Silicon NPN Epitaxial Planer  
Low Frequency Power Amplifier  
REJ03G0810-0200  
(Previous ADE-208-1388A)  
Rev.2.00  
Aug.10.2005  
Features  
Small size package: MPAK (SC–59A)  
Large Maximum current: IC = 1 A  
Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)  
High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))  
Complementary pair with 2SB1691  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
1. Emitter  
2. Base  
3
3. Collector  
1
2
Note: Marking is “WM-“.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to Base Voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
Ratings  
Unit  
VCBO  
VCEO  
VEBO  
IC  
60  
V
V
50  
6
V
1
2
A
Collector peak current  
Collector power dissipation  
Junction temperature  
ic(peak)  
PC  
A
800*  
mW  
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
55 to +150  
Note:  
*When using alumina ceramic board (25 x 60 x 0.7 mm)  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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