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2SD2656 PDF预览

2SD2656

更新时间: 2024-11-02 22:52:47
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
3页 76K
描述
General purpose amplification (30V, 1A)

2SD2656 数据手册

 浏览型号2SD2656的Datasheet PDF文件第2页浏览型号2SD2656的Datasheet PDF文件第3页 
2SD2656  
Transistors  
General purpose amplification (30V, 1A)  
2SD2656  
!Application  
Low frequency amplifier  
1.25  
!Features  
2.1  
1) A collector current is large.  
2) Collector saturation voltage is low.  
VCE(sat) 350mV  
At IC = 500mA / IB = 25mA  
0.1Min.  
Each lead has same dimensions  
ROHM : UMT3  
EIAJ : SC-70  
(1) Emitter  
(2) Base  
Abbreviated symbol : EU  
JEDEC : SOT-323  
(3) Collector  
!External dimensions (Units : mm)  
!Packaging specifications  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
V
Package  
Taping  
VCBO  
VCEO  
VEBO  
30  
Code  
T106  
3000  
30  
V
Basic ordering unit (pieces)  
Type  
6
V
I
C
1
2
A
2SD2656  
Collector current  
I
CP  
A
Power dissipation  
P
C
200  
mW  
°C  
°C  
Junction temperature  
Tj  
150  
Range of storage temperature Tstg  
55~+150  
Single pulse, PW=1ms  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
30  
30  
6
V
V
I
I
I
C
=10µA  
=1mA  
Collector-emitter breakdown voltage BVCEO  
C
Emitter-base breakdown voltage  
Collector cutoff current  
Emitter cutoff current  
BVEBO  
V
E
=10µA  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
nA  
nA  
V
CB=30V  
I
VEB=6V  
Collector-emitter saturation voltage  
DC current gain  
V
140 350 mV  
I
C
/I  
B
=500mA/25mA  
=2V/100mA  
CE=2V, I =−100mA, f=100MHz  
CB=10V, I =0A, f=1MHz  
1
1
h
270  
400  
5
680  
V
V
V
CE/IC  
Transition frequency  
f
T
MHz  
pF  
E
Corrector output capacitance  
Cob  
E
1 Pulsed  
1/2  

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