Datasheet > 2SD2655

2SD2655

更新时间： 2024-11-17 22:52:47

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
6页	76K
描述
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

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2SD2655 数据手册

2SD2655

Silicon NPN Epitaxial Planer

Low Frequency Power Amplifier

ADE-208-1388A (Z)

Rev.1

Jun. 2001

Features

•

Small size package: MPAK (SC–59A)

Large Maximum current: I_C= 1 A

Low collector to emitter saturation voltage: V_CE(sat)= 0.3 V max.(at I_C/I_B= 0.5 A/0.05 A)

High power dissipation: P_C= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))

Complementary pair with 2SB1691

Outline

MPAK

1. Emitter

2. Base

3. Collector

Note:

Marking is “WM-“.

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
2SD2655_11	RENESAS	获取价格	Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
2SD2655WM-TL-E	RENESAS	获取价格	Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
2SD2655WM-TL-H	RENESAS	获取价格	Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
2SD2656	ROHM	获取价格	General purpose amplification (30V, 1A)
2SD2656_13	ROHM	获取价格	NPN 1A 30V Low Frequency Amplifier Transistors
2SD2656FRAT106	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
2SD2656T106	ROHM	获取价格	NPN 1A 30V Low Frequency Amplifier Transistors
2SD2657	ROHM	获取价格	Low frequency amplifier
2SD2657_1	ROHM	获取价格	Low frequency amplifier
2SD2657K	ROHM	获取价格	Low frequency amplifier