是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 最大集电极电流 (IC): | 0.15 A |
配置: | Single | 最小直流电流增益 (hFE): | 560 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.15 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2654TLV | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, |
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2SD2654TLW | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, |
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2SD2654VWTL | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416 |
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2SD2655 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier |
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2SD2655 | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier |
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2SD2655_11 | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier |
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2SD2655WM-TL-E | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier |
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2SD2655WM-TL-H | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier |
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2SD2656 | ROHM |
获取价格 |
General purpose amplification (30V, 1A) |
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2SD2656_13 | ROHM |
获取价格 |
NPN 1A 30V Low Frequency Amplifier Transistors |
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