是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-96 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | Factory Lead Time: | 13 weeks |
风险等级: | 1.71 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 270 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e1 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.5 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 360 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
US6X5TR | ROHM |
类似代替 |
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TUMT6, 6 | |
2SD2700TL | ROHM |
类似代替 |
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TUMT3, 3 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2654 | ROHM |
获取价格 |
General Purpose Transistor (50V, 0.15A) | |
2SD2654E3 (新产品) | ROHM |
获取价格 |
The NPN general purpose transistor 2SD2654E3 is designed for low frequency amplifiers. | |
2SD2654TL | ROHM |
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Small Signal Bipolar Transistor, | |
2SD2654TLU | ROHM |
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Small Signal Bipolar Transistor | |
2SD2654TLV | ROHM |
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, | |
2SD2654TLW | ROHM |
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, | |
2SD2654VWTL | ETC |
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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416 | |
2SD2655 | TOSHIBA |
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Silicon NPN Epitaxial Planer Low Frequency Power Amplifier | |
2SD2655 | RENESAS |
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Silicon NPN Epitaxial Planer Low Frequency Power Amplifier | |
2SD2655_11 | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier |