5秒后页面跳转
2SD2653TL PDF预览

2SD2653TL

更新时间: 2024-10-02 13:01:19
品牌 Logo 应用领域
罗姆 - ROHM 放大器
页数 文件大小 规格书
3页 90K
描述
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN

2SD2653TL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-96
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.71最大集电极电流 (IC):2 A
集电极-发射极最大电压:12 V配置:SINGLE
最小直流电流增益 (hFE):270JESD-30 代码:R-PDSO-G3
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):360 MHzBase Number Matches:1

2SD2653TL 数据手册

 浏览型号2SD2653TL的Datasheet PDF文件第2页浏览型号2SD2653TL的Datasheet PDF文件第3页 
2SD2653  
Transistors  
Low frequency amplifier  
2SD2653  
zExternal dimensions (Units : mm)  
zApplication  
Low frequency amplifier  
Driver  
Each lead has same  
dimensions  
0.4  
1.0MAX  
0.85  
0.7  
( )  
3
zFeatures  
0~0.1  
1) A collector current is large.  
2) VCE(sat) 180mV  
at IC = 1A / IB = 50mA  
(1)  
(2)  
0.95 0.95  
1.9  
0.16  
2.9  
ROHM : TSMT3  
Abbreviated symbol: FW  
(1) Emitter  
(2) Base  
(3) Collector  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
15  
12  
6
Unit  
V
V
VCBO  
VCEO  
VEBO  
Collector-emitter voltage  
Emitter-base voltage  
V
I
C
2
4
500  
12  
A
Collector current  
Power dissipation  
I
CP  
A1  
mW  
W
P
C
Junction temperature  
Tj  
Tstg  
150  
55 to +150  
°C  
°C  
Range of storage temperature  
1 Single pulse, P  
W
=1ms  
25  
2 Mounted on a 25  
×
×
t 0.8mm Ceramic substrate  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
90  
360  
20  
Max.  
Unit  
V
Conditions  
15  
12  
6
I
I
I
C
=10µA  
=1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C
V
E
=10µA  
CB=15V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
100  
100  
180  
680  
nA  
nA  
mV  
MHz  
pF  
V
V
I
Emitter cutoff current  
V
I
C
=1A, I =50mA  
B
Collector-emitter saturation voltage  
DC current gain  
h
V
V
V
CE=2V, I  
CE=2V, I  
C
=200mA∗  
=−200mA, f=100MHz∗  
f
T
E
Transition frequency  
CB=10V, I  
E=0A, f=1MHz  
Cob  
Corrector output capacitance  
Pulsed  
zPackaging specifications  
Package  
Code  
Taping  
TL  
Basic ordering unit (pieces)  
3000  
Type  
2SD2653  
Rev.A  
1/2  

2SD2653TL 替代型号

型号 品牌 替代类型 描述 数据表
US6X5TR ROHM

类似代替

Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TUMT6, 6
2SD2700TL ROHM

类似代替

Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TUMT3, 3

与2SD2653TL相关器件

型号 品牌 获取价格 描述 数据表
2SD2654 ROHM

获取价格

General Purpose Transistor (50V, 0.15A)
2SD2654E3 (新产品) ROHM

获取价格

The NPN general purpose transistor 2SD2654E3 is designed for low frequency amplifiers.
2SD2654TL ROHM

获取价格

Small Signal Bipolar Transistor,
2SD2654TLU ROHM

获取价格

Small Signal Bipolar Transistor
2SD2654TLV ROHM

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3,
2SD2654TLW ROHM

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3,
2SD2654VWTL ETC

获取价格

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416
2SD2655 TOSHIBA

获取价格

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
2SD2655 RENESAS

获取价格

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
2SD2655_11 RENESAS

获取价格

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier