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2SD2653TL PDF预览

2SD2653TL

更新时间: 2024-11-03 13:01:19
品牌 Logo 应用领域
罗姆 - ROHM 放大器
页数 文件大小 规格书
3页 90K
描述
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN

2SD2653TL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-96
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.71最大集电极电流 (IC):2 A
集电极-发射极最大电压:12 V配置:SINGLE
最小直流电流增益 (hFE):270JESD-30 代码:R-PDSO-G3
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):360 MHzBase Number Matches:1

2SD2653TL 数据手册

 浏览型号2SD2653TL的Datasheet PDF文件第2页浏览型号2SD2653TL的Datasheet PDF文件第3页 
2SD2653  
Transistors  
Low frequency amplifier  
2SD2653  
zExternal dimensions (Units : mm)  
zApplication  
Low frequency amplifier  
Driver  
Each lead has same  
dimensions  
0.4  
1.0MAX  
0.85  
0.7  
( )  
3
zFeatures  
0~0.1  
1) A collector current is large.  
2) VCE(sat) 180mV  
at IC = 1A / IB = 50mA  
(1)  
(2)  
0.95 0.95  
1.9  
0.16  
2.9  
ROHM : TSMT3  
Abbreviated symbol: FW  
(1) Emitter  
(2) Base  
(3) Collector  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
15  
12  
6
Unit  
V
V
VCBO  
VCEO  
VEBO  
Collector-emitter voltage  
Emitter-base voltage  
V
I
C
2
4
500  
12  
A
Collector current  
Power dissipation  
I
CP  
A1  
mW  
W
P
C
Junction temperature  
Tj  
Tstg  
150  
55 to +150  
°C  
°C  
Range of storage temperature  
1 Single pulse, P  
W
=1ms  
25  
2 Mounted on a 25  
×
×
t 0.8mm Ceramic substrate  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
90  
360  
20  
Max.  
Unit  
V
Conditions  
15  
12  
6
I
I
I
C
=10µA  
=1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C
V
E
=10µA  
CB=15V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
100  
100  
180  
680  
nA  
nA  
mV  
MHz  
pF  
V
V
I
Emitter cutoff current  
V
I
C
=1A, I =50mA  
B
Collector-emitter saturation voltage  
DC current gain  
h
V
V
V
CE=2V, I  
CE=2V, I  
C
=200mA∗  
=−200mA, f=100MHz∗  
f
T
E
Transition frequency  
CB=10V, I  
E=0A, f=1MHz  
Cob  
Corrector output capacitance  
Pulsed  
zPackaging specifications  
Package  
Code  
Taping  
TL  
Basic ordering unit (pieces)  
3000  
Type  
2SD2653  
Rev.A  
1/2  

2SD2653TL 替代型号

型号 品牌 替代类型 描述 数据表
US6X5TR ROHM

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Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TUMT6, 6
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Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TUMT3, 3

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