Datasheet > 2SD2623X2

2SD2623X2

更新时间： 2024-02-22 22:02:40

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	74K
描述
Silicon NPN epitaxial planar type For low-frequency amplification

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中文翻译

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数据手册

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2SD2623X2 数据手册

Composite Transistors

XN01558

Silicon NPN epitaxial planar type

Unit: mm

+0.20

–0.05

1.9 ^0.1

(0.95) (0.95)

2.90

+0.10

–0.06

0.16

For low-frequency amplification

■ Features

•

Two elements incorporated into one package

(Emitter-coupled transistors)

•

+0.10

–0.05

Reduction of the mounting area and assembly cost by one half

0.30

10˚

■ Basic Part Number

•

2SD2623 × 2

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

1: Collector (Tr1)

2: Collector (Tr2)

3: Base (Tr2)

4: Emitter

5: Base (Tr1)

EIAJ: SC-74A

Mini5-G1 Package

Collector current

I_C

I_CP

P_T

0.5

Marking Symbol: 4Z

Internal Connection

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

300

°C

T_j

150

Tr2

T_stg

−55 to +150

Tr1

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

I_C= 10 µA, I_E= 0

I_C= 1 mA, I_B= 0

I_E= 10 µA, I_C= 0

V_CB= 25 V, I_E= 0

V_CE= 2 V, I_C= 0.5 A

100

800



Forward current transfer ratio ^*

h_FE

200

1, 2

h_FEratio ^*

h_FE(SmallV_CE= 2 V, I_C= 0.5 A

/Large)

0.50

0.99

0.14

Collector-emitter saturation voltage ^*

V_CE(sat)I_C= 0.5 A, I_B= 20 mA

0.40

1.2

Base-emitter saturation voltage ^*

V_BE(sat)I_C= 0.5 A, I_B= 50 mA

Transition frequency

f_T

V_CB= 10 V, I_E= −50 mA, f = 200 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

200

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

ON resistanse ^*

R_on

1.0

Ω

1 kΩ

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL

STANDARD JIS C 7030 measuring methods for transistors.

3: R_ontest circuit

I_B= 1 mA

2. 1: Pulse measurement

f = 1 kHz

V = 0.3 V

2: Ratio between one and another device

V_BV_VV_A

V_B× 1000

V_A− V_B

R_on

(Ω)

Publication date: December 2003

SJJ00264BED

12 3

中文翻译

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