5秒后页面跳转
2SD2627 PDF预览

2SD2627

更新时间: 2024-11-19 22:52:47
品牌 Logo 应用领域
三洋 - SANYO 电视输出应用
页数 文件大小 规格书
4页 32K
描述
Color TV Horizontal Deflection Output Applications

2SD2627 技术参数

生命周期:Obsolete零件包装代码:TO-220FI
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.76Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
最大集电极电流 (IC):6 A集电极-发射极最大电压:800 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):5
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SD2627 数据手册

 浏览型号2SD2627的Datasheet PDF文件第2页浏览型号2SD2627的Datasheet PDF文件第3页浏览型号2SD2627的Datasheet PDF文件第4页 
Ordering number : ENN6478  
NPN Triple Diffused Planar Silicon Transistor  
2SD2627  
Color TV Horizontal Deflection  
Output Applications  
Features  
Package Dimensions  
unit : mm  
High speed.  
High breakdown voltage(V  
=1500V).  
CBO  
2079C  
High reliability(Adoption of HVP process).  
Adoption of MBIT process.  
On-chip damper diode.  
[2SD2627]  
4.5  
10.0  
2.8  
3.2  
0.9  
1.2  
0.7  
0.75  
1 : Base  
1
2
3
2 : Collector  
3 : Emitter  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
2.55  
2.55  
SANYO : TO-220FI-LS  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
1500  
800  
6
V
V
I
6
A
C
Collector Current (Pulse)  
I
15  
A
CP  
2.0  
30  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
-55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
10  
I
V
V
=800V, I =0  
µA  
mA  
V
CBO  
CE  
E
Collector Cutoff Current  
Collector Sustain Voltage  
Emitter Cutoff Current  
I
=1500V, R =0  
BE  
1.0  
CES  
(sus)  
CE  
V
I
C
=100mA, I =0  
800  
40  
CEO  
B
I
V
EB  
=4V, I =0  
130  
mA  
EBO  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
91400 TS IM TA-2853 No.6478-1/4  

与2SD2627相关器件

型号 品牌 获取价格 描述 数据表
2SD2627LS SANYO

获取价格

Color TV Horizontal Deflection Output Applications
2SD2629 ETC

获取价格

TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 6A I(C) | TO-220FI
2SD2633 SANKEN

获取价格

Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD2634 SANYO

获取价格

Color TV Horizontal Deflection Output Applications
2SD2634 ISC

获取价格

Silicon NPN Power Transistors
2SD2634 SAVANTIC

获取价格

Silicon NPN Power Transistors
2SD2634 ONSEMI

获取价格

2SD2634
2SD2635 SANYO

获取价格

120V / 2A Driver Applications
2SD2636 TOSHIBA

获取价格

TRANSISTOR 8 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Powe
2SD2638 TOSHIBA

获取价格

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type