生命周期: | Obsolete | 零件包装代码: | TO-3PMLH |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.77 | 其他特性: | HIGH RELIABILITY |
最大集电极电流 (IC): | 8 A | 集电极-发射极最大电压: | 800 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最小直流电流增益 (hFE): | 5 |
最大降落时间(tf): | 0.0003 ns | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 3 W |
最大功率耗散 (Abs): | 65 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | VCEsat-Max: | 3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2635 | SANYO |
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120V / 2A Driver Applications | |
2SD2636 | TOSHIBA |
获取价格 |
TRANSISTOR 8 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Powe | |
2SD2638 | TOSHIBA |
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TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type | |
2SD2639 | SANYO |
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140V / 12A, AF 60W Output Applications | |
2SD2639D | ETC |
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TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-220AB | |
2SD2639E | ETC |
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TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-220AB | |
2SD2641 | SANKEN |
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Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) | |
2SD2641 | ALLEGRO |
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Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SD2641O | ALLEGRO |
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Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SD2641O | SANKEN |
获取价格 |
暂无描述 |