2SD2621

更新时间： 2024-11-19 22:52:47

品牌	Logo	应用领域
松下 - PANASONIC		驱动器
页数	文件大小	规格书
3页	82K
描述
Silicon NPN epitaxial planar type For low-frequency driver amplification

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2SD2621 数据手册

Transistors

2SD2621

Silicon NPN epitaxial planar type

For low-frequency driver amplification

Unit: mm

+0.05

–0.02

+0.05

0.33

0.10

–0.02

■ Features

• High forward current transfer ratio h_FE

• Low collector-emitter saturation voltage V_CE(sat)

• High emitter-base voltage (Collector open) V_EBO

+0.05

0.23

–0.02

(0.40)(0.40)

0.80 0.05

1.20 0.05

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

5˚

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

100

°C

1 : Base

Peak collector current

I_CP

2 : Emitter

3 : Collector

Collector power dissipation

Junction temperature

P_C

100

SSSMini3-F1 Package

T_j

125

Marking Symbol: 3B

Storage temperature

T_stg

−55 to +125

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

100

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

I_C= 10 µA, I_E= 0

I_C= 1 mA, I_B= 0

I_E= 10 µA, I_C= 0

V_CB= 60 V, I_E= 0

V_CE= 60 V, I_B= 0

V_CE= 10 V, I_C= 2 mA

0.1

1.0

µA



I_CEO

h_FE

400

1200

0.20

V_CE(sat)I_C= 10 mA, I_B= 1 mA

0.05

200

f_T

V_CB= 10 V, I_E= −2 mA, f = 200 MHz

MHz

Noise voltage

V_CE= 10 V, I_C= 1 mA, G_V= 80 dB

R_g= 100 kΩ, Function = FLAT

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: June 2004

SJC00307AED

12 3

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