Datasheet > 2SD2605

2SD2605

更新时间： 2024-11-17 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
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描述

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中文翻译

获取价格

数据手册

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2SD2605 数据手册

Power Transistors

2SD2605

Silicon NPN triple diffusion planar type

For power amplification

Unit: mm

Features

High collector to emitter V_CEO

■

5.0±0.1

●

10.0±0.2

1.0

●

Allowing supply with the radial taping

90°

Absolute Maximum Ratings (T =25˚C)

■

1.2±0.1

C1.0

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

2.25±0.2

0.65±0.1

1.05±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

200

0.35±0.1

150

0.55±0.1

C1.0

2 3

I_C

Collector power T_C=25°C

P_C

2.5±0.2

dissipation

Ta=25°C

2.0

1:Base

2:Collector

3:Emitter

MT4 Type Package

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 200V, I_E= 0

I_EBO

V_EB= 4V, I_C= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= 50µA, I_E= 0

200

150

I_C= 5mA, I_B= 0

I_E= 500µA, I_C= 0

h_FE1

V_CE= 10V, I_C= 150mA

V_CE= 10V, I_C= 400mA

I_C= 500mA, I_B= 50mA

V_CE= 10V, I_C= 0.5A, f = 1MHz

240

Forward current transfer ratio

Base to emitter voltage

h_FE2

V_BE

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

f_T

MHz

^*h_FE1Rank classification

Rank

h_FE1

60 to 140

100 to 240

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