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2SD2620 PDF预览

2SD2620

更新时间: 2024-11-19 22:52:47
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松下 - PANASONIC /
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描述
Silicon NPN epitaxial planer type(For low-frequency amplification)

2SD2620 数据手册

  
Transistors  
2SD2620J  
Silicon NPN epitaxial planer type  
Unit: mm  
For low-frequency amplification  
+0.0ꢀ  
–0.03  
1.60  
+0.03  
–0.01  
0.12  
1.00 0.0ꢀ  
3
I Features  
High forward current transfer ratio hFE  
Low collector to emitter saturation voltage VCE(sat)  
High emitter to base voltage VBEO  
SS-mini type package  
1
2
0.27 0.02  
(0.ꢀ0)(0.ꢀ0)  
I Absolute Maximum Ratings Ta = 25°C  
°  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
100  
100  
V
15  
V
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-81  
SS-Mini Type Package  
50  
20  
mA  
mA  
mW  
°C  
IC  
Marking Symbol: 3B  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
125  
Tj  
125  
Tstg  
55 to +125  
°C  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
0.1  
Unit  
µA  
µA  
V
Collector cutoff current  
VCB = 60 V, IE = 0  
ICEO  
VCE = 60 V, IB = 0  
1.0  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Forward current transfer ratio  
Collector to emitter saturation voltage  
Transition frequency  
VCBO  
VCEO  
VEBO  
hFE  
IC = 10 µA, IE = 0  
100  
100  
15  
IC = 1 mA, IB = 0  
V
IE = 10 µA, IC = 0  
V
VCE = 10 V, IC = 2 mA  
IC = 10 mA, IB = 1 mA  
VCB = 10 V, IE = −2 mA, f = 200 MHz  
400  
1 200  
0.2  
VCE(sat)  
fT  
0.05  
200  
80  
V
MHz  
mV  
Noise voltage  
NV  
VCE = 10 V, IC = 1 mA, GB = 80 dB  
Rg = 100 k, Function = FLAT  
1

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