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2SD2614 PDF预览

2SD2614

更新时间: 2024-11-19 23:20:31
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页数 文件大小 规格书
1页 56K
描述
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 5A I(C) | TO-220FN

2SD2614 数据手册

  
2SD2614  
Transistors  
Medium Power Transistor  
(Motor, Relay drive)  
(60 10V, 5A)  
2SD2614  
!Features  
!External dimensions (Units : mm)  
1) Built-in zener diode between collector and base.  
2) Strong protection against reverse surges due to  
"L" loads.  
10.0  
4.5  
2.8  
3.2  
φ
3) Built-in resistor between base and emitter.  
4) Built-in damper diode.  
1.2  
1.3  
0.8  
0.75  
( )  
(1) Base Gate  
2.54  
2.54  
)
2.6  
(
) (  
) (  
)
1
2
(
(
3
(
)
)
(2) Collector Drain  
!Absolute maximum ratings (Ta = 25°C)  
(
)
)
(
1
2
3
(3) Emitter Source  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
60±10  
60±10  
V
ROHM : TO-220FN  
V
Emitter-base voltage  
6
V
A (DC)  
A (Pulse)  
W
5
Collector current  
I
C
10  
*
2
25  
Collector power dissipation  
PC  
W (Tc = 25°C)  
°C  
Tj  
150  
Junction temperature  
Storage temperature  
Tstg  
55~+150  
°C  
Single pulse Pw = 10ms  
*
!Packaging specifications and hFE  
Type  
2SD2614  
TO-220FN  
2k~30k  
-
Package  
hFE  
Code  
500  
Basic ordering unit (pieces)  
!Circuit diagram  
C
B
R1  
R2  
E
E
B
: Emitter  
: Base  
R
R
1
2
3.5kΩ  
300Ω  
C : Collector  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
50  
50  
-
-
70  
70  
V
V
I
I
C
C
= 50µA  
= 5mA  
CB = 40V  
EB = 5V  
I
CBO  
EBO  
CE(sat)  
FE  
-
-
10  
µA  
mA  
V
V
V
I
-
-
3
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current transfer ratio  
V
-
2000  
-
-
1.5  
30000  
-
I
C
/I  
CE/I  
CB = 10V , IE  
B
= 2A/2mA  
= 3V/2A  
= 0A , f = 1MHz  
*
*
h
-
-
V
V
C
Output capacitance  
Cob  
75  
pF  
Measured using pulse current.  
*

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