Datasheet > 2SD2618

2SD2618

更新时间： 2024-11-17 23:20:31

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中文翻译

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数据手册

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2SD2618 数据手册

2SD2618

Transistors

Power Transistor (80V, 4A)

2SD2618

!Features

!Circuit diagram

1) Darlington connection for a high h .

2) Built-in resistor between base and emitter.

3) Built-in damper doide.

4) Complements the 2SB1676.

R 300Ω

B : Base

C : Collector

E : Emitter

!Absolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

A (DC)

Collector current

A (t = 100ms)

Collector power dissipation

W (Tc = 25°C)

Junction temperature

Storage temperature

150

°C

Tstg

−55~+150

!Packaging specifications and h^FE

Type

2SD2618

TO-220FN

1k~10k

Package

hFE

Code

500

Basic ordering unit (pieces)

!Electrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

= 50µA

= −1mA

100

CBO

µA

CB = 80V

Emitter cutoff current

EBO

EB = 5V

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

CE(sat)

1.5

10000

= 2A/4mA

= 3V/2A

CE = 5V , I = −0.2A , f = 10MHz

CB = 10V , I = 0A , f = 1MHz

hFE

1000

CE/IC

MHz

Output capacitance

Cob

1 Measured using pulse current.

2 Transition frequency of the device.

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