Datasheet > 2SD2606

2SD2606

更新时间： 2024-09-25 23:20:31

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获取价格

数据手册

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2SD2606 数据手册

Power Transistors

2SD2606

Silicon NPN diffusion planar type Darlington

Unit: mm

For power amplification

Features

■

10.5±0.3

4.6±0.2

1.4±0.1

●

Extremely satisfactory linearity of the forward current transfer

ratio h_FE

●

High collector to base voltage V_CBO

●

Wide area of safe operation (ASO)

●

TO-220(c) type package enabling direct soldering of the radiating

1.4±0.1

0.8±0.1

fin to the printed circuit board, etc. of small electronic equipment.

2.5±0.2

0.1⁺–0^0.3

2.54±0.3

Absolute Maximum Ratings (T =25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

500

400

1:Base

2:Collector

3:Emitter

TO–220 Package(c)

I_C

Internal Connection

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

1.4

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

V_CB= 500V, I_E= 0

V_CE= 400V, I_E= 0

V_EB= 12V, I_C= 0

Collector cutoff current

I_CEO

Emitter cutoff current

I_EBO

Collector to emitter voltage

V_CEO(sus)

h_FE1

I_C= 100mA, R_BE= ∞

V_CE= 2V, I_C= 2A

400

500

200

Forward current transfer ratio

h_FE2

V_CE= 2V, I_C= 6A

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 7A, I_B= 70mA

V_CE= 10V, I_C= 0.5A, f = 1MHz

2.0

2.5

Transition frequency

Turn-on time

f_T

1.5

5.0

6.5

MHz

µs

t_on

t_stg

t_f

I_C= 7A, I_B1= 70mA, I_B2= –70mA,

V_CC= 300V

Storage time

µs

Fall time

µs

Collector output capacitance

C_ob

V_CB= 10V, I_E= 0, f = 1MHz

^*V_CEO(sus)Test circuit

50/60Hz

mercury relay

L 10mH

120Ω

1Ω

15V

中文翻译

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