Datasheet > 2SD2604_06

2SD2604_06

更新时间： 2024-09-26 04:26:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	142K
描述
Silicon NPN Triple Diffused Type (Darlington)

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中文翻译

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数据手册

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2SD2604_06 数据手册

2SD2604

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

2SD2604

High-Power Switching Applications

Unit: mm

Hammer Drive, Pulse Motor Drive Applications

•

High DC current gain: h

= 2000 (min)

Low saturation voltage: V

= 1.5 V (max)

CE (sat)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

110 ± 15

Collector current

Base current

Pulse

0.7

Ta = 25°C

Tc = 25°C

2.0

Collector power

dissipation

JEDEC

JEITA

―

SC-67

2-10R1A

Junction temperature

150

°C

TOSHIBA

Storage temperature range

−55 to 150

stg

Weight: 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Collector

Base

≈ 5 kΩ ≈ 150 Ω

Emitter

2006-11-21

12 3 4 5

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