Datasheet > 2SD2598R

2SD2598R

更新时间： 2024-11-17 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	66K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| SC-71

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中文翻译

获取价格

数据手册

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2SD2598R 数据手册

Transistor

2SD2598

Silicon NPN epitaxial planer type

darlington

Unit: mm

2.5±0.1

1.05

±0.05

6.9±0.1

4.0

(1.45)

0.8

0.7

For low-frequency amplification

0.65 max.

Features

■

●

Forward current transfer ratio h_FEis designed high, which is ap-

propriate to the driver circuit of motors and printer bammer: h_FE

= 4000 to 20000.

0.45⁺–0⁰.^.0¹5

2.5±0.5 2.5±0.5

●

A shunt resistor is omitted from the driver.

●

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

the upper figure, the 3:Base

Absolute Maximum Ratings (Ta=25˚C)

type as shown in

the lower figure is

also available.

MT2 Type Package

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1.2±0.1

750

0.65

max.

0.1

0.45_–0.05

I_C

500

(HW type)

Collector power dissipation

Junction temperature

Storage temperature

P_C

Internal Connection

T_j

150

˚C

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= 25V, I_E= 0

min

typ

max

100

Unit

Collector cutoff current

Emitter cutoff current

I_EBO

V_EB= 4V, I_C= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

V_CBO

V_CEO

V_EBO

I_C= 100µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 100µA, I_C= 0

h_FE

V_CE= 10V, I_C= 500mA^*2

I_C= 500mA, I_B= 0.5mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

4000

20000

2.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

3.0

Transition frequency

f_T

200

MHz

^*2Pulse measurement

Rank classification

Rank

h_FE

4000 ~ 10000 8000 ~ 20000

12 3

中文翻译

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