Datasheet > 2SD2598Q

2SD2598Q

更新时间： 2024-11-17 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	66K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| SC-71

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2598Q 数据手册

Transistor

2SD2598

Silicon NPN epitaxial planer type

darlington

Unit: mm

2.5±0.1

1.05

±0.05

6.9±0.1

4.0

(1.45)

0.8

0.7

For low-frequency amplification

0.65 max.

Features

■

●

Forward current transfer ratio h_FEis designed high, which is ap-

propriate to the driver circuit of motors and printer bammer: h_FE

= 4000 to 20000.

0.45⁺–0⁰.^.0¹5

2.5±0.5 2.5±0.5

●

A shunt resistor is omitted from the driver.

●

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

the upper figure, the 3:Base

Absolute Maximum Ratings (Ta=25˚C)

type as shown in

the lower figure is

also available.

MT2 Type Package

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1.2±0.1

750

0.65

max.

0.1

0.45_–0.05

I_C

500

(HW type)

Collector power dissipation

Junction temperature

Storage temperature

P_C

Internal Connection

T_j

150

˚C

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= 25V, I_E= 0

min

typ

max

100

Unit

Collector cutoff current

Emitter cutoff current

I_EBO

V_EB= 4V, I_C= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

V_CBO

V_CEO

V_EBO

I_C= 100µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 100µA, I_C= 0

h_FE

V_CE= 10V, I_C= 500mA^*2

I_C= 500mA, I_B= 0.5mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

4000

20000

2.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

3.0

Transition frequency

f_T

200

MHz

^*2Pulse measurement

Rank classification

Rank

h_FE

4000 ~ 10000 8000 ~ 20000

12 3

中文翻译

下载PDF

与2SD2598Q相关器件

型号	品牌	获取价格	描述	数据表
2SD2598R	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| SC-71
2SD2599	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV)
2SD2599	ISC	获取价格	Silicon NPN Power Transistors
2SD2599	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD2600	SANYO	获取价格	NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications
2SD2603	FOSHAN	获取价格	TO-220F
2SD2604	TOSHIBA	获取价格	HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE PULSE MOTOR DRIVE APPLICATIONS
2SD2604_06	TOSHIBA	获取价格	Silicon NPN Triple Diffused Type (Darlington)
2SD2605	ETC	获取价格
2SD2605P	PANASONIC	获取价格	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,